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參數(shù)資料
| 型號(hào)： | BD651 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
| 中文描述： | ECONOLINE: RJ & RG - 單輸入雙輸出，隔離的直流3千伏或直流4千伏，普通的短路保護(hù)電路，UL94V標(biāo)準(zhǔn)，0型封裝材料，效率達(dá)到85% |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 115K |
| 代理商： | BD651 |
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
MAY 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with
BD646, BD648, BD650 and BD652
G
62.5 W at 25°C Case Temperature
G
8 A Continuous Collector Current
G
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
V
CBO
80
100
120
140
60
80
100
120
5
8
12
0.3
62.5
2
50
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
LI
C
2
T
j
T
stg
T
L
V
A
A
A
W
W
mJ
°C
°C
°C
-65 to +150
-65 to +150
260
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD645 | NPN SILICON POWER DARLINGTONS |
| BD647 | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
| BD649 | NPN SILICON POWER DARLINGTONS |
| BD745 | NPN SILICON POWER TRANSISTORS |
| BD745A | NPN SILICON POWER TRANSISTORS |
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