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參數(shù)資料
| 型號： | BD533FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Complementary Silicon Power Transistors(互補硅功率晶體管) |
| 中文描述： | 互補硅功率晶體管（互補硅功率晶體管） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | BD533FP |
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BD533FP / BD534FP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD534FP | Complementary Silicon Power Transistors(互補硅功率晶體管) |
| BD537 | Complemetary Silicon Power Transistors(互補硅功率晶體管) |
| BD536 | Complemetary Silicon Power Transistors(互補硅功率晶體管) |
| BD678A | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BD670 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD533J | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD533K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 8A I(C) | TO-220AB |
| BD534 | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD5340 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:VOLTAGE DETECTOR IC with adjustable delay time |
| BD5340FVE | 制造商:ROHM 制造商全稱:Rohm 功能描述:Voltage Detector IC with Adjustable Output Delay |
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