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參數(shù)資料
| 型號： | BCV62A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP general-purpose double transistors |
| 中文描述： | PNP 通用雙晶體管 |
| 封裝： | BCV62<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 49, 2002,;BCV62<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 49, 20 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 145K |
| 代理商： | BCV62A |
BCV62
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
4 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
[1]
V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
V
BE
decreases by about 2 mV/K with increasing temperature.
Device, without emitter resistors, mounted on an FR4 PCB.
[2]
[3]
V
BEsat
base-emitter
saturation voltage
I
C
=
10 mA;
I
B
=
0.5 mA
I
C
=
100 mA;
I
B
=
5 mA
I
C
=
2 mA; V
CE
=
5 V
I
C
=
10 mA; V
CE
=
5 V
V
CE
=
5 V;
I
C
=
10 mA;
f = 100 MHz
V
CB
=
10 V;
I
E
= i
e
= 0 A
V
CE
=
5 V;
I
C
=
200
μ
A; R
S
= 2 k
Ω
;
f = 1 kHz; B = 200 Hz
[1]
-
700
-
mV
[1]
-
850
-
mV
V
BE
base-emitter voltage
[2]
600
650
-
-
750
820
-
mV
mV
MHz
[2]
-
f
T
transition frequency
100
C
c
collector capacitance
-
4.5
-
pF
NF
noise figure
-
-
10
dB
Transistor TR2
V
EBS
emitter-base voltage
V
CB
= 0 V; I
E
=
250 mA
V
CB
= 0 V; I
E
=
10
μ
A
V
CE
=
5 V; I
C
=
2 mA
-
400
-
-
1.5
-
V
mV
h
FE
DC current gain
BCV62
BCV62A
BCV62B
BCV62C
100
100
220
420
-
-
-
-
800
250
475
800
Transistors TR1 and TR2
I
C1
/I
E2
current matching
I
E2
=
0.5 mA;
V
CE1
=
5 V;
T
amb
≤
25
°
C
T
amb
≤
150
°
C
V
CE1
=
5 V
0.7
0.7
-
-
-
1.3
1.3
5
I
E2
emitter current 2
[3]
-
mA
Table 8.
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
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