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參數(shù)資料
| 型號： | BCV62A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP general-purpose double transistors |
| 中文描述： | PNP 通用雙晶體管 |
| 封裝： | BCV62<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 49, 2002,;BCV62<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 49, 20 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 145K |
| 代理商： | BCV62A |
BCV62
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 26 July 2010
3 of 14
NXP Semiconductors
BCV62
PNP general-purpose double transistors
5. Limiting values
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Per transistor
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBS
emitter-base voltage
I
C
collector current
I
CM
peak collector current
I
BM
peak base current
Per device
P
tot
total power dissipation
T
j
junction temperature
T
amb
ambient temperature
T
stg
storage temperature
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
[1]
Device mounted on an FR4 PCB.
7. Characteristics
Table 8.
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Transistor TR1
I
CBO
collector-base
cut-off current
Limiting values
Conditions
Min
Max
Unit
open emitter
open base
V
CE
= 0 V
-
-
-
-
-
-
30
30
6
100
200
200
V
V
V
mA
mA
mA
T
amb
≤
25
°
C
[1]
-
250
150
+150
+150
mW
°
C
°
C
°
C
-
65
65
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
Min
Typ
-
Max
500
Unit
K/W
[1]
-
Characteristics
Conditions
Min
Typ
Max
Unit
V
CB
=
30 V; I
E
= 0 A
V
CB
=
30 V; I
E
= 0 A;
T
j
= 150
°
C
V
EB
=
5 V; I
C
= 0 A
-
-
-
-
15
5
nA
μ
A
I
EBO
emitter-base
cut-off current
DC current gain
-
-
100
nA
h
FE
V
CE
=
5 V;
I
C
=
100
μ
A
V
CE
=
5 V; I
C
=
2 mA
I
C
=
10 mA;
I
B
=
0.5 mA
I
C
=
100 mA;
I
B
=
5 mA
100
-
-
100
-
-
75
800
300
V
CEsat
collector-emitter
saturation voltage
mV
-
250
650
mV
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