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參數(shù)資料
| 型號： | BC860W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP general purpose transistors |
| 中文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | BC860W |
1999 May 28
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC859; BC860
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
V
BEsat
decreases by about
1.7 mV/K with increasing temperature.
V
BE
decreases by about
2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
1
MAX.
15
4
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
2 mA; V
CE
=
5 V;
see Figs 2 and 3
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC859B; BC860B
BC859C; BC860C
collector-emitter saturation
voltage
220
420
600
75
250
700
850
650
4.5
10
475
800
300
650
750
820
V
CEsat
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100 mA; I
B
=
5 mA
I
C
=
10 mA; I
B
=
0.5 mA; note 1
I
C
=
100 mA; I
B
=
5 mA; note 1
I
C
=
2 mA; V
CE
=
5 V; note 2
I
C
=
10 mA; V
CE
=
5 V; note 2
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
500 mV; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz 100
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 30 Hz to 15 kHz
mV
mV
mV
mV
mV
mV
pF
pF
MHz
V
BEsat
base-emitter saturation voltage
V
BE
base-emitter voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
BC859B; BC860B;
BC859C; BC860C
noise figure
BC859B; BC860B;
BC859C; BC860C
4
dB
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
4
dB
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PDF描述 |
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