參數(shù)資料
型號: BC860W
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: PNP general purpose transistors
中文描述: 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SC-70, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 46K
代理商: BC860W
1999 May 28
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC859; BC860
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC849 and BC850.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
4B
4C
TYPE
NUMBER
MARKING
CODE
(1)
4F
4G
BC859B
BC859C
BC860B
BC860C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BC859
BC860
collector-emitter voltage
BC859
BC860
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
30
50
V
V
V
CEO
open base
65
65
30
45
5
100
200
200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
amb
25
°
C; note 1
相關(guān)PDF資料
PDF描述
BC860 PNP general purpose transistors
BC860BWQ62702C2302 Leaded Cartridge Fuse; Current Rating:10mA; Voltage Rating:125V; Fuse Terminals:Radial Lead; Fuse Type:Fast Acting; Voltage Rating:125V; Body Material:Plastic Cap; Diameter:6.35mm; Leaded Process Compatible:No; Length:8.89mm
BC860 SOT23 NPN SILICON PLANAR
BC860 Surface mount Si-Epitaxial PlanarTransistors
BC860B Surface mount Si-Epitaxial PlanarTransistors
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