參數(shù)資料
型號(hào): BC860B
廠商: DIOTEC SEMICONDUCTOR AG
元件分類: 功率晶體管
英文描述: Surface mount Si-Epitaxial PlanarTransistors
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 46K
代理商: BC860B
1999 May 28
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC859; BC860
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC849 and BC850.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
4B
4C
TYPE
NUMBER
MARKING
CODE
(1)
4F
4G
BC859B
BC859C
BC860B
BC860C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BC859
BC860
collector-emitter voltage
BC859
BC860
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
30
50
V
V
V
CEO
open base
65
65
30
45
5
100
200
200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
amb
25
°
C; note 1
相關(guān)PDF資料
PDF描述
BC860C Surface mount Si-Epitaxial PlanarTransistors
BC860 EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
BC860AL Automotive Fuse; Current Rating:15A; Voltage Rating:32V; Fuse Type:Fast Acting; Fuse Terminals:Blade; Length:18.54mm; Series:257; Fuse Size/Group:18.54 x 19.05 x 5.08mm
BC859AL FUSE 3.15A, 250V 5X20MM FAST BLO
BC860CL Leaded Cartridge Fuse; Current Rating:700mA; Voltage Rating:125V; Fuse Terminals:Radial Lead; Fuse Type:Fast Acting; Voltage Rating:125V; Body Material:Plastic Cap; Diameter:6.35mm; Leaded Process Compatible:Yes; Length:8.89mm RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BC860B /T3 功能描述:兩極晶體管 - BJT TRANS GP TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC860B T/R 制造商:NXP Semiconductors 功能描述:Trans GP BJT PNP 45V 0.1A 3-Pin TO-236AB T/R
BC860B,215 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC860B,235 功能描述:兩極晶體管 - BJT TRANS GP TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
bc860b215 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: