參數(shù)資料
型號(hào)： BC858BDW1T1
廠商： 樂(lè)山無(wú)線電股份有限公司
英文描述： Dual General Purpose Transistors(PNP Duals)
中文描述： 雙通用晶體管（民進(jìn)黨對(duì)偶）
文件頁(yè)數(shù)： 5/5頁(yè)
文件大?。?/td> 164K
代理商： BC858BDW1T1
LESHAN RADIO COMPANY, LTD.
BC856b–5/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
SINGLE PULSE
t
1
Z
θ
JA
(t) = r(t) R
θ
JA
R
θ
JA
= 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θ
JC
(t)
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
D=0.5
0.2
0.1
0.05
0.02
0.01
t, TIME (ms)
Figure 13. Thermal Response
0
1.0
10
100
1.0K
10K
100K
1.0M
1.0
0.1
0.01
0.001
I
C
,
r
R
-200
-100
-50
-10
-5.0
-2.0
-1.0
-5.0
-10
-30
-45
-65
-100
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate I
C
–V
CE
limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
<
150°C. T
J
(pk) may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
相關(guān)PDF資料
PDF描述
BC856BDW1T1 Dual General Purpose Transistors(PNP Duals)
BC857CDW1T1 Dual General Purpose Transistors(PNP Duals)
BC858CDW1T1 Dual General Purpose Transistors(PNP Duals)
BC857BDW1T1 ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
BC858U High Speed CMOS Logic Phase-Locked-Loop with VCO 16-SOIC -55 to 125
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