參數(shù)資料
型號(hào)： BC857CDW1T1
廠商： 樂(lè)山無(wú)線電股份有限公司
英文描述： Dual General Purpose Transistors(PNP Duals)
中文描述： 雙通用晶體管（民進(jìn)黨對(duì)偶）
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 164K
代理商： BC857CDW1T1
LESHAN RADIO COMPANY, LTD.
BC856b–1/5
1
3
2
Dual General Purpose Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector–Emitter Voltage
V
CEO
–65
–45
–30
V
Collector–Base Voltage
V
CBO
–80
–50
–30
V
Emitter–Base Voltage
V
EBO
–5.0
–5.0
–5.0
V
Collector Current
-
Continuous
I
C
–100
–100
–100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
Max
380
250
Unit
mW
mW
3.0
328
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
ORDERING INFORMATION
Device
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Shipping
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
1
3
2
6
4
5
See Table
Q
1
Q
2
6
4
5
SOT–363/SC–88
CASE 419B STYLE 1
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
相關(guān)PDF資料
PDF描述
BC858CDW1T1 Dual General Purpose Transistors(PNP Duals)
BC857BDW1T1 ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
BC858U High Speed CMOS Logic Phase-Locked-Loop with VCO 16-SOIC -55 to 125
BCD 100mA SILICON CARTRIDGE RECTIFIERS
BCD10 100mA SILICON CARTRIDGE RECTIFIERS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BC857CDW1T1G 功能描述:兩極晶體管 - BJT 100mA 50V Dual PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC857CE6327 制造商:Rochester Electronics LLC 功能描述:- Bulk
BC857CE-6327 制造商:Siemens 功能描述:100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
BC857CE6327HTSA1 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANS PNP AF 45V SOT-23
BC857CE6327T 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R
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