參數(shù)資料
型號： BC856BDW1T1
廠商： 樂山無線電股份有限公司
英文描述： Dual General Purpose Transistors(PNP Duals)
中文描述： 雙通用晶體管（民進黨對偶）
文件頁數(shù)： 2/5頁
文件大?。?/td> 164K
代理商： BC856BDW1T1
LESHAN RADIO COMPANY, LTD.
BC856b–2/5
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
BC856 Series
BC857 Series
BC858 Series
Collector–Emitter Breakdown Voltage
(I
C
= –10
μ
A, V
EB
= 0)
BC856 Series
BC857 Series
BC858 Series
Collector–Base Breakdown Voltage
(I
C
= –10
μ
A)
BC856 Series
BC857 Series
BC858 Series
Emitter–Base Breakdown Voltage
(I
E
= –1.0
μ
A)
BC856 Series
BC857 Series
BC858 Series
Collector Cutoff Current
(V
CB
= –30 V)
(V
CB
= –30 V, T
A
= 150°C)
Symbol
Min
Typ
Max
Unit
V
(BR)CEO
V
–65
–45
–30
—
—
—
—
—
—
V
(BR)CES
V
–80
–50
–30
—
—
—
—
—
—
V
(BR)CBO
V
–80
–50
–30
—
—
—
—
—
—
V
(BR)EBO
V
–5.0
–5.0
–5.0
—
—
—
—
—
—
—
—
—
—
–15
–4.0
I
CBO
nA
μ
A
ON CHARACTERISTICS
DC Current Gain
(I
C
= –10
μ
A, V
CE
= –5.0 V)
h
FE
—
BC856B, BC857B, BC858B
BC857C, BC858C
—
—
150
270
—
—
(I
C
= –2.0 mA, V
CE
=– 5.0 V) BC856B, BC857B, BC858B
220
420
—
—
—
—
–0.6
—
290
520
—
—
–0.7
–0.9
––
—
475
800
–0.3
–0.65
—
—
–0.75
–0.82
BC857C, BC858C
Collector–Emitter Saturation Voltage (I
C
= -10 mA, I
B
= -0.5 mA) V
CE(sat)
Collector–Emitter Saturation Voltage
( I
C
= -100 mA, I
B
= -5.0 mA)
Base–Emitter Saturation Voltage (I
C
= –10 mA, I
B
= –0.5 mA)
Base–Emitter Saturation Voltage
(I
C
= –100 mA, I
B
= –5.0 mA)
Base–Emitter Voltage (I
C
= –2.0 mA, V
CE
= –5.0 V)
Base–Emitter Voltage
(I
C
= –10 mA, V
CE
= –5.0 V)
V
V
BE(sat)
V
V
BE(on)
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –10 mA, V
CE
= –5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= –10 V, f = 1.0 MHz)
Noise Figure (I
C
= –0.2 mA,
V
CE
= –5.0 V
dc
, R
S
= 2.0 k
, f = 1.0 kHz, BW = 200 Hz)
f
T
100
—
—
MHz
C
obo
NF
—
—
4.5
pF
dB
—
—
10
相關PDF資料
PDF描述
BC857CDW1T1 Dual General Purpose Transistors(PNP Duals)
BC858CDW1T1 Dual General Purpose Transistors(PNP Duals)
BC857BDW1T1 ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
BC858U High Speed CMOS Logic Phase-Locked-Loop with VCO 16-SOIC -55 to 125
BCD 100mA SILICON CARTRIDGE RECTIFIERS
相關代理商/技術參數(shù)
參數(shù)描述
BC856BDW1T1/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual General Purpose Transistors
BC856BDW1T1D 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistors
BC856BDW1T1G 功能描述:兩極晶體管 - BJT 100mA 80V Dual PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC856BDW1T3 功能描述:兩極晶體管 - BJT SS GP XSTR PNP 65V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC856BDW1T3G 功能描述:兩極晶體管 - BJT 100mA 80V Dual PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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