參數(shù)資料
型號(hào): BC856
廠商: ON SEMICONDUCTOR
英文描述: General Purpose Transistor PNP Silicon(-65V通用型硅PNP晶體管)
中文描述: 通用硅晶體管進(jìn)步黨(- 65V的通用型硅晶體管進(jìn)步黨)
文件頁數(shù): 5/8頁
文件大?。?/td> 111K
代理商: BC856
BC856ALT1 Series
http://onsemi.com
5
Figure 13. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
r
2.0
5.0
1.0
0.5
0.2
0.1
R
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0k
2.0k
5.0k 10k
Figure 14. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
-200
-1.0
I
T
A
= 25
°
C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
T
J
= 25
°
C
Z
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
= 83.3
°
C/W MAX
Z
θ
JA
(t) = r(t) R
θ
JA
R
θ
JA
= 200
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
θ
JC
(t)
t
1
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
-100
-50
-10
-5.0
-2.0
-5.0
-10
-30
-45 -65
-100
1 s
BC558, BC559
BC557
BC556
The safe operating area curves indicate I
C
–V
CE
limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150
°
C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
150
°
C. T
J(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
相關(guān)PDF資料
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BC856 Small Signal Transistors (PNP)(小信號(hào)晶體管(PNP))
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BC856 PNP general purpose transistors
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