參數(shù)資料
型號: BC856
廠商: ON SEMICONDUCTOR
英文描述: General Purpose Transistor PNP Silicon(-65V通用型硅PNP晶體管)
中文描述: 通用硅晶體管進步黨(- 65V的通用型硅晶體管進步黨)
文件頁數(shù): 4/8頁
文件大小: 111K
代理商: BC856
BC856ALT1 Series
http://onsemi.com
4
BC856
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
Figure 8. “On” Voltage
I
C
, COLLECTOR CURRENT (mA)
-0.8
-1.0
-0.6
-0.2
-0.4
1.0
2.0
-0.1
-1.0
-10
-200
-0.2
0.2
0.5
-0.2
-1.0
-10
-200
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= -5.0 V
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02
-1.0
-10
0
-20
-0.1
-0.4
-0.8
V
V
θ
°
-0.2
-2.0
-10
-200
-1.0
T
J
= 25
°
C
I
C
=
-10 mA
h
V
V
CE
= -5.0 V
T
A
= 25
°
C
0
-0.5
-2.0
-5.0
-20
-50
-100
-0.05
-0.2
-0.5
-2.0
-5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5
-5.0
-20
-50
-100
-55
°
C to 125
°
C
θ
VB
for V
BE
-2.0 -5.0
-20
-50 -100
Figure 11. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current–Gain – Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2
-1.0
-50
2.0
-2.0
-10
-100
100
200
500
50
20
20
10
8.0
6.0
4.0
-1.0
-10
-100
V
CE
= -5.0 V
C
f
T
-0.5
-5.0
-20
T
J
= 25
°
C
C
ob
C
ib
-50 mA
-200 mA
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參數(shù)描述
BC856,215 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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BC856_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor
BC856_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistor