參數(shù)資料
型號(hào)： BC856
廠商： ON SEMICONDUCTOR
英文描述： General Purpose Transistor PNP Silicon(-65V通用型硅PNP晶體管)
中文描述： 通用硅晶體管進(jìn)步黨（- 65V的通用型硅晶體管進(jìn)步黨）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 111K
代理商： BC856
BC856ALT1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
V
(BR)CEO
–65
–45
–30
–
–
–
–
–
–
V
Collector–Emitter Breakdown Voltage
(I
C
= –10
μ
A, V
EB
= 0)
BC856 Series
BC857 Series
BC858, BC859 Series
V
(BR)CES
–80
–50
–30
–
–
–
–
–
–
V
Collector–Base Breakdown Voltage
(I
C
= –10 A)
BC856 Series
BC857 Series
BC858, BC859 Series
V
(BR)CBO
–80
–50
–30
–
–
–
–
–
–
V
Emitter–Base Breakdown Voltage
(I
E
= –1.0 A)
BC856 Series
BC857 Series
BC858, BC859 Series
V
(BR)EBO
–5.0
–5.0
–5.0
–
–
–
–
–
–
V
Collector Cutoff Current (V
CB
= –30 V)
Collector Cutoff Current
(V
CB
= –30 V, T
A
= 150
°
C)
I
CBO
–
–
–
–
–15
–4.0
nA
μ
A
ON CHARACTERISTICS
DC Current Gain
(I
C
= –10
μ
A, V
CE
= –5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
(I
C
= –2.0 mA, V
CE
= –5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC858C, BC859C
h
FE
–
–
–
125
220
420
90
150
270
180
290
520
–
–
–
250
475
800
–
Collector–Emitter Saturation Voltage
(I
C
= –10 mA, I
B
= –0.5 mA)
(I
C
= –100 mA, I
B
= –5.0 mA)
V
CE(sat)
–
–
–
–
–0.3
–0.65
V
Base–Emitter Saturation Voltage
(I
C
= –10 mA, I
B
= –0.5 mA)
(I
C
= –100 mA, I
B
= –5.0 mA)
V
BE(sat)
–
–
–0.7
–0.9
–
–
V
Base–Emitter On Voltage
(I
C
= –2.0 mA, V
CE
= –5.0 V)
(I
C
= –10 mA, V
CE
= –5.0 V)
V
BE(on)
–0.6
–
–
–
–0.75
–0.82
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(I
C
= –10 mA, V
CE
= –5.0 Vdc, f = 100 MHz)
f
T
100
–
–
MHz
Output Capacitance
(V
CB
= –10 V, f = 1.0 MHz)
C
ob
–
–
4.5
pF
Noise Figure
(I
C
= –0.2 mA, V
CE
= –5.0 Vdc, R
S
= 2.0 k
, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
NF
–
–
–
–
10
4.0
dB
相關(guān)PDF資料
PDF描述
BC856 Small Signal Transistors (PNP)(小信號(hào)晶體管（PNP）)
BC857 Small Signal Transistors (PNP)(小信號(hào)晶體管（PNP）)
BC858 Small Signal Transistors (PNP)(小信號(hào)晶體管（PNP）)
BC859 Small Signal Transistors (PNP)(小信號(hào)晶體管（PNP）)
BC856 PNP general purpose transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BC856,215 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC856 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP SOT-23
BC856/T1 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR SMD KLEINSIGNAL UNIVERSAL
BC856_06 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor
BC856_08 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:PNP Silicon AF Transistor
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*