- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385122 > BAW101 (NXP SEMICONDUCTORS) High voltage double diode PDF資料下載
參數(shù)資料
| 型號： | BAW101 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High voltage double diode |
| 中文描述： | 0.25 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 127K |
| 代理商： | BAW101 |
2003 May 13
3
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm
2
.
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: pulse width = 300
μ
s;
δ
= 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
300
600
300
600
250
140
625
4.5
V
V
V
V
mA
mA
mA
A
series connection
V
RRM
repetitive peak reverse voltage
series connection
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
I
F
continuous forward current
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
square wave; T
j
= 25
°
C prior to surge;
t = 1
μ
s
T
amb
= 25
°
C; note 1
P
tot
T
stg
T
j
T
amb
65
65
350
+150
150
+150
mW
°
C
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
BR(R)
V
F
I
R
reverse breakdown voltage
forward voltage
reverse current
I
R
= 100
μ
A
I
F
= 100 mA; note 1
V
R
= 250 V
V
R
= 250 V; T
amb
= 150
°
C
when switched from I
F
= 30 mA to I
R
= 30 mA;
R
L
= 100
; measured at I
R
= 3 mA
V
R
= 0 V; f = 1 MHz
300
1.1
150
50
50
V
V
nA
μ
A
ns
t
rr
reverse recovery time
C
d
diode capacitance
2
pF
相關PDF資料 |
PDF描述 |
|---|---|
| BAW567DW | QUAD SURFACE MOUNT SWITCHING DIODE ARRAY |
| BAW56M | High-speed switching diodes |
| BAW56T | SURFACE MOUNT FAST SWITCHING DIODE |
| BAV99T | SURFACE MOUNT FAST SWITCHING DIODE |
| BAV70T | SURFACE MOUNT FAST SWITCHING DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BAW101 T/R | 功能描述:二極管 - 通用，功率，開關 DIODE SW TAPE-7 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAW101,215 | 功能描述:二極管 - 通用，功率，開關 DIODE SW TAPE-7 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| BAW101/DG/B2,215 | 制造商:NXP Semiconductors 功能描述:PHABAW101/DG/B2,215 DIODE |
| BAW101_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Switching Diode |
| BAW101_11 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES |
發(fā)布緊急采購，3分鐘左右您將得到回復。