參數(shù)資料
型號: AU5517DR2G
廠商: ON Semiconductor
文件頁數(shù): 9/15頁
文件大?。?/td> 0K
描述: IC AMP 2 CURRENT CTRL 16-SOIC
標(biāo)準(zhǔn)包裝: 1
放大器類型: 跨導(dǎo)
電路數(shù): 2
輸出類型: 推挽式
轉(zhuǎn)換速率: 50 V/µs
增益帶寬積: 2MHz
電流 - 輸入偏壓: 400nA
電壓 - 輸入偏移: 400µV
電流 - 電源: 2.6mA
電流 - 輸出 / 通道: 650µA
電壓 - 電源,單路/雙路(±): 4 V ~ 44 V,±2 V ~ 22 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC
包裝: 剪切帶 (CT)
其它名稱: AU5517DR2GOSCT
NE5517, NE5517A, AU5517
http://onsemi.com
3
NOTE: V+ of output buffers and amplifiers are internally connected.
B
AMP
BIAS
INPUT
B
DIODE
BIAS
B
INPUT
(+)
B
INPUT
()
B
OUTPUT
V+ (1)
B
BUFFER
INPUT
B
BUFFER
OUTPUT
AMP
BIAS
INPUT
DIODE
BIAS
INPUT
(+)
INPUT
()
OUTPUT
V
BUFFER
INPUT
BUFFER
OUTPUT
A
AA
A
123
4
5
6
7
8
16
15
14
13
12
11
10
9
+
B
+
A
Figure 2. Connection Diagram
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (Note 1)
VS
44 VDC or ±22
V
Power Dissipation, Tamb = 25 °C (Still Air) (Note 2)
NE5517N, NE5517AN
NE5517D, AU5517D
PD
1500
1125
mW
Thermal Resistance, JunctiontoAmbient
D Package
N Package
RqJA
140
94
°C/W
Differential Input Voltage
VIN
±5.0
V
Diode Bias Current
ID
2.0
mA
Amplifier Bias Current
IABC
2.0
mA
Output Short-Circuit Duration
ISC
Indefinite
Buffer Output Current (Note 3)
IOUT
20
mA
Operating Temperature Range
NE5517N, NE5517AN
AU5517T
Tamb
0 °C to +70 °C
40 °C to +125 °C
°C
Operating Junction Temperature
TJ
150
°C
DC Input Voltage
VDC
+VS to VS
Storage Temperature Range
Tstg
65 °C to +150 °C
°C
Lead Soldering Temperature (10 sec max)
Tsld
230
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For selections to a supply voltage above ±22 V, contact factory.
2. The following derating factors should be applied above 25 °C
N package at 10.6 mW/°C
D package at 7.1 mW/°C.
3. Buffer output current should be limited so as to not exceed package dissipation.
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