- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51302 > ATF-58143-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數(shù)資料
| 型號： | ATF-58143-BLKG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 232K |
| 代理商： | ATF-58143-BLKG |
Tape Dimensions For Outline 4T
Description
Symbol
Size (mm)
Size (inches)
Cavity
Length
A
o
2.40 ± 0.10
0.094 ± 0.004
Width
B
o
2.40 ± 0.10
0.094 ± 0.004
Depth
K
o
1.20 ± 0.10
0.047 ± 0.004
Pitch
P
4.00 ± 0.10
0.157 ± 0.004
Bottom Hole Diameter
D
1
1.00 + 0.25
0.039 + 0.010
Perforlation
Diameter
D
1.50 + 0.10
0.061 + 0.002
Pitch
P
O
4.00 ± 0.10
0.157 ± 0.004
Position
E
1.75 ± 0.10
0.069 ± 0.004
Carrier Tape
Width
W
8.00 + 0.30 0.10
0.315 + 0.012
Thickness
t
1
0.254 ± 0.02
0.0100 ± 0.0008
Cover Tape
Width
C
5.40 ± 0.010
0.205 + 0.004
Thickness
T
t
0.062 ± 0.001
0.0025 ± 0.0004
Distance
Cavity to Perforation
(Width Direction)
F
3.50 ± 0.05
0.138 ± 0.002
Cavity to Perforation
(Length Direction)
P
2
2.00 ± 0.05
0.079 ± 0.002
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-3749EN
AV02-0672EN - September 9, 2009
P
P0
P2
F
W
C
D1
D
E
A0
An
t1 (CARRIER TAPE THICKNESS)
Tt(COVER TAPE THICKNESS)
An
B0
KO
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-58143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATP101 | 25 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP102 | 40 A, 30 V, 0.0185 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP103 | 55 A, 30 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP103 | 55 A, 30 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。