- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51302 > ATF-58143-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數(shù)資料
| 型號： | ATF-58143-BLKG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 232K |
| 代理商： | ATF-58143-BLKG |
2
ATF-58143 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
AbsoluteMaximum
V
DS
DrainSourceVoltage[2]
V
5
V
GS
GateSourceVoltage[2]
V
5to1
V
GD
GateDrainVoltage[2]
V
5to1
I
DS
DrainCurrent[2]
mA
100
P
diss
TotalPowerDissipation[3]
mW
500
P
inmax.
RF InputPower
(Vds=3V , Ids =30mA)
(Vds=0V, Ids=0mA)
(Vds=4V, Ids=30mA)
dBm
+20
I
GS
GateSourceCurrent
mA
2[5]
T
CH
ChannelTemperature
°C
150
T
STG
StorageTemperature
°C
65to150
θ
jc
ThermalResistance[4]
°C/W
162
Notes:
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 6.2 mW/°C for T
L > 33°C.
4. Thermal resistance measured using 150°C Liquid Crystal Measure
ment method.
5. The device can handle +13 dBm RF Input Power provided I
GS is limited
to 2 mA. I
GS at P1dB drive level is bias circuit dependent. See applications
section for additional information.
Product Consistency Distribution Charts [6,7]
Figure 1. Typical I-V Curves (V
GS=0.1V per step)
VDS (V)
I DS
(mA)
0
7
1
2
3
4
5
6
120
100
80
60
40
20
0
0.7V
0.6V
0.5V
0.4V
0.3V
-150
-125
-100
-75
-50
-25
0
0.3
0.4
0.5
0.6
NF (dB)
0.7
0.8
Cpk=2.735
Stdev=0.049
Figure 2. NF @ 3V, 30 mA.
USL = 0.9, Nominal = 0.5
GAIN (dB)
15
16
17
18
Cpk=1.953
Stdev=0.2610
Figure 3. Gain @ 3V, 30 mA.
USL = 18.5, LSL = 15, Nominal = 16.5
OIP3 (dBm)
28
29
30
31
32
34
33
Cpk=1.036
Stdev=0.509
Figure 4. OIP3 @ 3V, 30 mA.
LSL = 29, Nominal = 30.5
Notes:
6. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a tradeoff between an optimal noise match and a realizeable match based
on production test equipment. Circuit losses have been deembedded from actual measurements.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-58143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATP101 | 25 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP102 | 40 A, 30 V, 0.0185 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP103 | 55 A, 30 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP103 | 55 A, 30 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。