- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375375 > ATF-25570 0.5-10 GHz General Purpose Gallium Arsenide FET PDF資料下載
參數(shù)資料
| 型號： | ATF-25570 |
| 英文描述： | 0.5-10 GHz General Purpose Gallium Arsenide FET |
| 中文描述： | 0.5-10吉赫通用砷化鎵場效應管 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 44K |
| 代理商： | ATF-25570 |
5-62
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
°
C, V
DS
= 3 V, I
DS
=20 mA
Freq.
S
11
S
21
GHz
Mag.
Ang.
dB
Mag.
0.5
.98
-24
14.0
5.02
1.0
.96
-41
13.4
4.70
2.0
.84
-76
12.3
4.14
3.0
.78
-100
10.8
3.48
4.0
.72
-123
9.6
3.01
5.0
.68
-142
8.5
2.67
6.0
.63
-162
7.8
2.45
7.0
.60
175
7.2
2.30
8.0
.58
150
6.3
2.06
9.0
.59
128
5.6
1.90
10.0
.60
113
4.7
1.72
11.0
.60
104
4.1
1.61
12.0
.59
91
3.9
1.56
S
12
Mag.
.036
.049
.075
.090
.102
.114
.121
.133
.141
.146
.151
.157
.160
S
22
Ang.
160
145
115
94
73
54
36
18
-1
-19
-36
-48
-68
dB
-28.9
-26.2
-22.5
-20.9
-19.8
-18.8
-18.3
-17.5
-17.0
-16.7
-16.4
-16.1
-15.9
Ang.
71
62
44
33
20
9
0
-7
-16
-28
-35
-40
-44
Mag.
.56
.55
.49
.46
.42
.38
.35
.30
.26
.25
.26
.28
.30
Ang.
-24
-33
-51
-60
-76
-88
-101
-118
-138
-167
172
155
146
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
°
C, V
DS
= 5 V, I
DS
=50 mA
Freq.
S
11
S
21
GHz
Mag.
Ang.
dB
Mag.
0.5
.97
-27
16.2
6.49
1.0
.94
-45
15.5
5.95
2.0
.81
-82
13.5
4.72
3.0
.73
-105
11.7
3.86
4.0
.66
-128
10.3
3.29
5.0
.61
-148
9.2
2.88
6.0
.57
-170
8.5
2.65
7.0
.56
167
7.6
2.41
8.0
.57
145
6.8
2.19
9.0
.59
127
6.0
2.00
10.0
.60
115
5.2
1.82
11.0
.60
108
4.7
1.72
12.0
.57
93
4.5
1.67
A model for this device is available in the DEVICE MODELS section.
S
12
Mag.
.025
.032
.049
.057
.068
.075
.083
.097
.110
.119
.129
.134
.143
S
22
Ang.
156
141
111
91
70
52
34
16
-1
-18
-35
-47
-64
dB
-32.0
-29.9
-26.2
-24.9
-23.4
-22.5
-21.6
-20.2
-19.2
-18.5
-17.8
-17.5
-16.9
Ang.
63
57
45
41
37
32
30
28
18
12
4
1
-10
Mag.
.59
.60
.58
.55
.52
.49
.48
.45
.42
.40
.40
.42
.44
Ang.
-21
-28
-39
-50
-62
-72
-84
-98
-115
-136
-159
-176
173
70 mil Package Dimensions
.040
1.02
1
3
4
2
SOURCE
SOURCE
DRAIN
GATE
.020
.508
.070
1.70
.495
±
.030
12.57
±
.76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
mm
.035
.89
.004
±
.002
.10
±
.05
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-25735 | 0.5-10 GHz General Purpose Gallium Arsenide FET |
| ATF-26836 | 2-16 GHz General Purpose Gallium Arsenide FET |
| ATF-26836-STR | 2-16 GHz General Purpose Gallium Arsenide FET |
| ATF-26836-TR1 | 2-16 GHz General Purpose Gallium Arsenide FET |
| ATF-26884 | 2-16 GHz General Purpose Gallium Arsenide FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF25735 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 50MA I(DSS) | MICRO-XVAR |
| ATF-25735 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5-10 GHz General Purpose Gallium Arsenide FET |
| ATF26150 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30MA I(DSS) | MICRO-XVAR |
| ATF26350 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30MA I(DSS) | MICRO-XVAR |
| ATF26550 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30MA I(DSS) | MICRO-XVAR |
發(fā)布緊急采購，3分鐘左右您將得到回復。