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參數(shù)資料
| 型號(hào)： | ATF-25570 |
| 英文描述： | 0.5-10 GHz General Purpose Gallium Arsenide FET |
| 中文描述： | 0.5-10吉赫通用砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | ATF-25570 |
5-60
0.5–10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25570
70 mil Package
Description
The ATF-25570 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a hermetic, high reliabil-
Features
High Output Power:
20.5 dBm Typical P
1 dB
at 4GHz
Low Noise Figure:
1.0 dB Typical at 4 GHz
High Associated Gain:
14.0dB Typical at 4GHz
Hermetic Gold-Ceramic
Microstrip Package
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
O
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 20 mA
Parameters and Test Conditions
Units Min.
dB
Typ. Max.
1.0
1.2
1.4
14.0
11.0
8.5
20.5
f = 4.0 GHz
f = 6.0 GHz
f = 8.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 8.0 GHz
f = 4.0 GHz
1.3
G
A
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 20 mA
dB
13.0
P
1 dB
Power Output @ 1 dB Gain Compression:
V
DS
=5 V, I
DS
= 50 mA
1 dB Compressed Gain: V
DS
=5 V, I
DS
=50 mA
Transconductance: V
DS
=3 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA
dBm
G
1 dB
g
m
I
DSS
V
P
f = 4.0 GHz
dB
13.0
80
100
-2.0
mmho
mA
V
50
50
-3.0
150
-0.8
ity package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
5965-8711E
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| ATF25735 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 50MA I(DSS) | MICRO-XVAR |
| ATF-25735 | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:0.5-10 GHz General Purpose Gallium Arsenide FET |
| ATF26150 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30MA I(DSS) | MICRO-XVAR |
| ATF26350 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30MA I(DSS) | MICRO-XVAR |
| ATF26550 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30MA I(DSS) | MICRO-XVAR |
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