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參數(shù)資料
| 型號： | ATF-26836-TR1 |
| 英文描述： | 2-16 GHz General Purpose Gallium Arsenide FET |
| 中文描述： | 2-16千兆赫通用砷化鎵場效應管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 47K |
| 代理商： | ATF-26836-TR1 |
5-67
2–16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26836
36 micro-X Package
Symbol
G
SS
NF
O
G
A
P
1 dB
Parameters and Test Conditions
Tuned Small Signal Gain: V
DS
= 5 V, I
DS
= 30 mA
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 10 mA
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 10 mA
Power Output @ 1 dB Gain Compression:
V
DS
= 5 V, I
DS
= 30 mA
Transconductance: V
DS
= 3 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA
Units Min.
dB
dB
dB
Typ. Max.
9.0
2.2
6.0
18.0
Electrical Specifications, T
A
= 25
°
C
f = 12.0 GHz
f = 12.0 GHz
f = 12.0 GHz
f = 12.0 GHz dBm
7.0
15.0
g
m
I
DSS
V
P
mmho
mA
V
15
30
-3.5
35
50
-1.5
90
-0.5
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Features
High Output Power:
18.0dBm Typical P
1 dB
at 12GHz
High Gain:
9.0 dB Typical G
SS
at 12GHz
Cost Effective Ceramic
Microstrip Package
Tape-and-Reel Packaging
Option Available
[1]
5965-8704E
Description
The ATF-26836 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
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