參數(shù)資料
型號(hào): AT28BV64B-20SC
廠商: ATMEL CORP
元件分類(lèi): DRAM
英文描述: 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
中文描述: 8K X 8 EEPROM 3V, 200 ns, PDSO28
封裝: 0.300 INCH, PLASTIC, MS-013, SOIC-28
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 254K
代理商: AT28BV64B-20SC
1
Features
Single 2.7V to 3.6V Supply
Hardware and Software Data Protection
Low Power Dissipation
– 15 mA Active Current
– 20
μA CMOS Standby Current
Fast Read Access Time - 200 ns
Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64 Byte Page Write Operation
DATA Polling for End of Write Detection
High-reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28BV64B is a high-performance electrically erasable programmable read only
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 20
μA.
64K (8K x 8)
Battery-Voltage
Parallel EEPROM
with Page Write
and Software
Data Protection
AT28BV64B
Rev. 0299F
–05/28/99
3-Volt, 64K
E
2
PROM with
Data Protection
Pin Configurations
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
NC
WE
VCC
NC
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PLCC
Top View
Note:
PLCC package pins 1 and 17
are DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
D
I
I
I
A
A
N
D
V
W
N
(continued)
相關(guān)PDF資料
PDF描述
AT28BV64B-20SI 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B-20TC 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B-20TI 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B-25JC 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
AT28BV64B-25JI 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT28BV64B-20SI 功能描述:電可擦除可編程只讀存儲(chǔ)器 200NS IND TEMP PKG- 200NS IND TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
AT28BV64B20SU 制造商:ATMEL 功能描述:Pb Free
AT28BV64B-20SU 功能描述:電可擦除可編程只讀存儲(chǔ)器 200NS IND TEMP GRN PKG RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
AT28BV64B-20SU SL383 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 64KBIT 8KX8 3.3V 28SOIC - Tape and Reel
AT28BV64B-20SU-T 功能描述:IC EEPROM 64KBIT 200NS 28SOIC 制造商:microchip technology 系列:- 包裝:剪切帶(CT) 零件狀態(tài):在售 存儲(chǔ)器類(lèi)型:非易失 存儲(chǔ)器格式:EEPROM 技術(shù):EEPROM 存儲(chǔ)容量:64Kb (8K x 8) 寫(xiě)周期時(shí)間 - 字,頁(yè):10ms 訪問(wèn)時(shí)間:200ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C(TC) 安裝類(lèi)型:表面貼裝 封裝/外殼:28-SOIC(0.295",7.50mm 寬) 供應(yīng)商器件封裝:28-SOIC 標(biāo)準(zhǔn)包裝:1