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參數(shù)資料
| 型號： | AT-41435 |
| 英文描述： | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高達6 GHz低噪聲硅雙極型晶體管) |
| 中文描述： | 到6 GHz低噪聲硅雙極型晶體管（高達6 GHz的低噪聲硅雙極型晶體管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 44K |
| 代理商： | AT-41435 |
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
Low Noise Figure:
1.7 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
High Associated Gain:
14.0 dB Typical at 2.0 GHz
10.0 dB Typical at 4.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
Cost Effective Ceramic
Microstrip Package
AT-41435
35 micro-X Package
Description
Agilent’s AT-41435 is a general
purpose NPN bipolar transistor
that offers excellent high fre-
quency performance. The AT-
41435 is housed in a cost effective
surface mount 100 mil micro-X
package. The 4 micron emitter-to-
emitter pitch enables this transis-
tor to be used in many different
functions. The 14 emitter finger
interdigitated geometry yields an
intermediate sized transistor with
impedances that are easy to match
for low noise and moderate power
applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near 50
at 1 GHz, makes this device
easy to use as a low noise ampli-
fier.
The AT-41435 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
相關PDF資料 |
PDF描述 |
|---|---|
| AT-41470 | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高達6 GHz低噪聲硅雙極型晶體管) |
| AT-41486 | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高達6 GHz低噪聲硅雙極型晶體管) |
| AT-41511 | NPN Silicon Bipolar Transistor(NPN硅雙極型晶體管) |
| AT-41532 | General purpose transistor |
| AT-41532-TR2 | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | SOT-323 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT41435-3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60MA I(C) | MICRO-X |
| AT41435-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60MA I(C) | MICRO-X |
| AT-41435G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT4144 | 功能描述:開關配件 CENTER DIVIDER RoHS:否 制造商:C&K Components 類型:Cap 用于:Pushbutton Switches 設計目的: |
| AT4145 | 功能描述:開關配件 SQUARE DUST COVER FOR UB2 RoHS:否 制造商:C&K Components 類型:Cap 用于:Pushbutton Switches 設計目的: |
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