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| 型號(hào)： | AT-41470 |
| 英文描述： | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高達(dá)6 GHz低噪聲硅雙極型晶體管) |
| 中文描述： | 到6 GHz低噪聲硅雙極型晶體管（高達(dá)6 GHz的低噪聲硅雙極型晶體管） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | AT-41470 |
Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
Low Noise Figure:
1.6 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
High Associated Gain:
14.5 dB Typical at 2.0 GHz
10.5 dB Typical at 4.0 GHz
High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
Hermetic, Gold-ceramic
Microstrip Package
AT-41470
70 mil Package
Description
Agilent’s AT-41470 is a general
purpose NPN bipolar transistor
that offers excellent high
frequency performance. The
AT-41470 is housed in a hermetic,
high reliability gold-ceramic 70 mil
microstrip package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50
at 1 GHz , makes
this device easy to use as a low
noise amplifier.
The AT-41470 bipolar transistor is
fabricated using Agilent’s 10 GHz
f
T
Self-Aligned-Transistor (SAT)
process. The die is nitride passi-
vated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
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| AT-41486 | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高達(dá)6 GHz低噪聲硅雙極型晶體管) |
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