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參數(shù)資料
| 型號(hào)： | AT-41511 |
| 英文描述： | NPN Silicon Bipolar Transistor(NPN硅雙極型晶體管) |
| 中文描述： | NPN硅雙極型晶體管（npn型硅雙極型晶體管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 14K |
| 代理商： | AT-41511 |
NPN Silicon Bipolar Transistor
Reliability Data
The following cumulative test
results have been obtained from
testing performed at Hewlett-
Packard in accordance with the
latest revision of MIL-STD-883.
Data was gathered from the
product qualification, reliability
monitor, and engineering
evaluation.
For the purpose of this reliability
data sheet, a failure is any part
which fails to meet the electrical
and/or mechanical specification
listed in the Communications
Components Designer’s Catalog.
Units
Tested
77
Total
Total
Failed
0
Failure Rate
(%/1K Hours)
0
Test Name
High Temperature
Operating Life
(O.L.)
Test Condition
T
j
= 150
°
C
Device Hrs.
77,000
HTRB
T
A
= 121
°
C
76
76,000
0
0
V
CB
= 16 V
1. Life Test
A. Demonstrated Performance
AT-41511
AT-41533
Point
(1)
90% Confidence Level
(2)
J unction
Temp.
MTTF*
Tj (
°
C)
(hours)
FIT
( 3)
175
1.3
×
10
5
7692
150
6.94
×
10
5
1440
125
4.57
×
10
6
218.8
100
3.87
×
10
7
25.8
55
4.13
×
10
9
0.242
MTTF
(hours)
5.65
×
10
4
3.02
×
10
5
1.68
×
10
7
1.99
×
10
6
1.79
×
10
9
FIT
( 3)
17692
3314
503.3
59.4
0.56
*MTTF data calculated from high temperature Operating Life tests.
B. Failure Rate Prediction
The failure rate will depend on the
device. The estimated life at
different temperatures is calcu-
lated, using the Arrhenius plot
with activation energy of 1.1eV,
and the device thermal resistance
on stress board of 130
°
C/W, and is
listed in the following table.
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PDF描述 |
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| AT-41586 | Low Cost General Purpose Transistors(低價(jià)格通用晶體管) |
| AT-42010 | Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高達(dá)6 GHz中等功率硅雙極型晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-41511-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor |
| AT-41511-BLKG | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41511-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| AT-41511-TR1 | 功能描述:IC TRANS NPN GP BIPOLAR SOT-143 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-41511-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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