參數(shù)資料
型號(hào)： APTGF90VDA60T3G
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi)： IGBT 晶體管
英文描述： 110 A, 600 V, N-CHANNEL IGBT
封裝： ROHS COMPLIANT, SP3, 25 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 204K
代理商： APTGF90VDA60T3G
APTGF90VDA60T3G
APTGF90VDA60
T
3G
–
Rev
0
S
ep
tembe
r,
2009
www.microsemi.com
1- 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
4
3
16
8
23
22
31
30
32
29
NTC
26
27
15
19
13
20
10
11
14
7
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
Tc = 25°C
110
IC
Continuous Collector Current
Tc = 80°C
90
ICM
Pulsed Collector Current
Tc = 25°C
200
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
416
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
200A @ 600V
VCES = 600V
IC = 90A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction (PFC)
Interleaved PFC
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
-
Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single boost of twice the current capability
RoHS compliant
Dual Boost chopper
NPT IGBT Power Module
相關(guān)PDF資料
PDF描述
APTGL325SK120D3G IGBT
APTGL475DA120D3G IGBT
APTGL700U120D4G 910 A, 1200 V, N-CHANNEL IGBT
APTGT100DA120T1G 140 A, 1200 V, N-CHANNEL IGBT
APTGT100DU60T 150 A, 600 V, N-CHANNEL IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF90X60E3 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF90X60E3G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF90X60TE3 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF90X60TE3G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGFQ25H120T2G 功能描述:IGBT 1200V 40A 227W MODULE RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*