參數(shù)資料
型號: APTC60DAM18CTG
廠商: Advanced Power Technology Ltd.
英文描述: Boost chopper SiC FWD diode Super Junction MOSFET Power Module
中文描述: 前輪驅(qū)動升壓斬波碳化硅二極管的超級結(jié)MOSFET的功率模塊
文件頁數(shù): 7/7頁
文件大?。?/td> 346K
代理商: APTC60DAM18CTG
APTC60DAM18CTG
A
APT website – http://www.advancedpower.com
7 – 7
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
Rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
50
100
150
200
0
0.5
1
1.5
2
2.5
3
3.5
V
F
Forward Voltage (V)
I
F
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
500
1000
1500
2000
200
300
400
500
600
700
800
V
R
Reverse Voltage (V)
I
R
Capacitance vs.Reverse Voltage
0
1000
2000
3000
4000
1
10
100
1000
V
R
Reverse Voltage
C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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