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參數(shù)資料
| 型號(hào)： | APTC60DAM18CTG |
| 廠(chǎng)商： | Advanced Power Technology Ltd. |
| 英文描述： | Boost chopper SiC FWD diode Super Junction MOSFET Power Module |
| 中文描述： | 前輪驅(qū)動(dòng)升壓斬波碳化硅二極管的超級(jí)結(jié)MOSFET的功率模塊 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 346K |
| 代理商： | APTC60DAM18CTG |
APTC60DAM18CTG
A
APT website – http://www.advancedpower.com
2 – 7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GS
= 0V,V
DS
= 600V
V
GS
= 0V,V
DS
= 600V
V
GS
= 10V, I
D
= 71.5A
V
GS
= V
DS
, I
D
= 4mA
V
GS
= ±20
V, V
DS
= 0V
Min
2.1
Typ
3
Max
100
1000
18
3.9
±200
Unit
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
28
10.2
0.85
1036
Max
Unit
nF
Q
gs
Q
gd
Gate – Source Charge
116
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 300V
I
D
= 143A
444
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
21
30
283
84
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 400V
I
D
= 143A
R
G
= 1.2
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 143A,
R
G
= 1.2
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 143A,
R
G
= 1.2
ns
E
on
Turn-on Switching Energy
1608
E
off
Turn-off Switching Energy
3920
μJ
E
on
Turn-on Switching Energy
2630
E
off
Turn-off Switching Energy
4824
μJ
Chopper diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
600
Typ
100
1.6
2.0
Max
2
10
1.8
2.4
Unit
V
T
j
= 25°C
T
j
= 175°C
Tc = 125°C
T
j
= 25°C
T
j
= 175°C
I
RM
Maximum Reverse Leakage Current
V
R
=600V
mA
I
F
DC Forward Current
A
V
F
Diode Forward Voltage
I
F
= 100A
V
Q
C
Total Capacitive Charge
I
F
= 100A, V
R
= 300V
di/dt =2400A/μs
140
nC
f = 1MHz, V
R
= 200V
f = 1MHz, V
R
= 400V
650
500
C
Total Capacitance
pF
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