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參數(shù)資料
| 型號： | APTC60DAM18CTG |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Boost chopper SiC FWD diode Super Junction MOSFET Power Module |
| 中文描述： | 前輪驅(qū)動(dòng)升壓斬波碳化硅二極管的超級結(jié)MOSFET的功率模塊 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大小： | 346K |
| 代理商： | APTC60DAM18CTG |
APTC60DAM18CTG
A
APT website – http://www.advancedpower.com
6 – 7
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, Source to Drain Voltage (V)
I
D
,
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
40
80
120
160
200
240
I
D
, Drain Current (A)
t
d
d
V
DS
=400V
R
G
=1.2
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
0
40
80
120
160
200
240
I
D
, Drain Current (A)
t
r
f
V
DS
=400V
R
G
=1.2
T
J
=125°C
L=100μH
Switching Energy vs Current
E
on
E
off
0
1
2
3
4
5
6
7
8
9
10
0
40
80
120
160
200
240
I
D
, Drain Current (A)
S
V
DS
=400V
R
G
=1.2
T
J
=125°C
L=100μH
E
on
E
off
0
5
10
15
20
0
2.5
Gate Resistance (Ohms)
5
7.5
10
12.5
S
Switching Energy vs Gate Resistance
V
DS
=400V
I
D
=143A
T
J
=125°C
L=100μH
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
140
160
30
50
70
90
110
130
I
D
, Drain Current (A)
F
Operating Frequency vs Drain Current
V
DS
=400V
D=50%
R
G
=1.2
T
J
=125°C
T
C
=75°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC60DAM24CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DAM24T1G | 功能描述:MOSFET N-CH 600V 95A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60DAM35T1G | 功能描述:MOSFET N-CH 600V 72A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60DDAM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC60DDAM35T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual boost chopper Super Junction MOSFET Power Module |
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