參數(shù)資料
型號(hào): APTC60AM35SCT
廠商: Advanced Power Technology Ltd.
英文描述: Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
中文描述: 相腳系列
文件頁數(shù): 7/7頁
文件大小: 326K
代理商: APTC60AM35SCT
APTC60AM35SCT
A
APT website – http://www.advancedpower.com
7 – 7
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001
0.0001
0.001
Rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
20
40
60
80
0
0.5
1
1.5
2
2.5
3
3.5
V
F
Forward Voltage (V)
I
F
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
100
200
300
400
500
600
700
800
200
300
400
500
600
700
800
V
R
Reverse Voltage (V)
I
R
Capacitance vs.Reverse Voltage
0
200
400
600
800
1000
1200
1400
1600
1
10
100
1000
V
R
Reverse Voltage
C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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