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參數(shù)資料
| 型號： | APTC60AM35SCT |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 相腳系列 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 326K |
| 代理商： | APTC60AM35SCT |
APTC60AM35SCT
A
APT website – http://www.advancedpower.com
3 – 7
Parallel diode ratings and characteristics
Symbol Characteristic
I
F(AV)
Maximum Average Forward Current
Test Conditions
50% duty cycle
Min
Typ
40
1.6
2.0
Max
1.8
2.4
Unit
A
Tc = 125°C
T
j
= 25°C
T
j
= 175°C
V
F
Diode Forward Voltage
I
F
= 40A
V
Q
C
Total Capacitive Charge
I
F
= 40A, V
R
= 300V
di/dt =1200A/μs
56
nC
f = 1MHz, V
R
= 200V
f = 1MHz, V
R
= 400V
260
200
Q
Total Capacitance
pF
Thermal and package characteristics
Symbol Characteristic
Min
2500
-40
-40
-40
Typ
Max
0.3
0.65
0.8
150
125
100
4.7
160
Unit
Transistor
Series diode
Parallel diode
R
thJC
Junction to Case
°C/W
V
ISOL
T
J
T
STG
T
C
Torque Mounting torque
Wt
Package Weight
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.16 K
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
V
°C
To Heatsink
M5
N.m
g
Min
Typ
68
4080
Max
Unit
k
K
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Package outline
T: Thermistor temperature
R
T
: Thermistor value at T
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC60AM35SCTG | 功能描述:POWER MODULE MOSFET 600V 72A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM35T1G | 功能描述:MOSFET PWR MOD PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM42F2G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC60AM45B1G | 功能描述:MOSFET N CH 600V 49A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM45BC1G | 功能描述:MOSFET N CH 600V 49A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
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