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參數(shù)資料
| 型號： | APTC60AM35SCT |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 相腳系列 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 326K |
| 代理商： | APTC60AM35SCT |
APTC60AM35SCT
A
APT website – http://www.advancedpower.com
6 – 7
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3
0.5
V
SD
, Source to Drain Voltage (V)
0.7
0.9
1.1
1.3
1.5
I
D
,
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
20
40
60
80
100
120
I
D
, Drain Current (A)
t
d
d
V
DS
=400V
R
G
=2.5
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
, Drain Current (A)
t
r
f
V
DS
=400V
R
G
=2.5
T
J
=125°C
L=100μH
Switching Energy vs Current
E
on
E
off
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20
40
60
80
100
120
I
D
, Drain Current (A)
S
V
DS
=400V
R
G
=2.5
T
J
=125°C
L=100μH
E
on
E
off
0
2
4
6
8
10
0
5
Gate Resistance (Ohms)
10
15
20
25
S
Switching Energy vs Gate Resistance
V
DS
=400V
I
D
=72A
T
J
=125°C
L=100μH
0
20
40
60
80
100
120
140
15 20 25 30 35 40 45 50 55 60 65
I
D
, Drain Current (A)
F
Operating Frequency vs Drain Current
V
DS
=400V
D=50%
R
G
=2.5
T
J
=125°C
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參數(shù)描述 |
|---|---|
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| APTC60AM45BC1G | 功能描述:MOSFET N CH 600V 49A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:CoolMOS™ 標準包裝:10 系列:* |
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