參數(shù)資料
型號(hào): APTC60AM18SC
廠商: Advanced Power Technology Ltd.
英文描述: Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
中文描述: 相腳系列
文件頁數(shù): 7/7頁
文件大?。?/td> 320K
代理商: APTC60AM18SC
APTC60AM18SC
A
APT website – http://www.advancedpower.com
7 – 7
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001
0.0001
0.001
Rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
40
80
120
160
0
0.5
1
1.5
2
2.5
3
3.5
V
F
Forward Voltage (V)
I
F
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
200
400
600
800
1000
1200
1400
1600
200
300
400
500
600
700
800
V
R
Reverse Voltage (V)
I
R
Capacitance vs.Reverse Voltage
0
500
1000
1500
2000
2500
3000
1
10
100
1000
V
R
Reverse Voltage
C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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