- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366575 > APTC60AM18SC (Advanced Power Technology Ltd.) Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module PDF資料下載
參數(shù)資料
| 型號： | APTC60AM18SC |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 相腳系列 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 320K |
| 代理商： | APTC60AM18SC |
APTC60AM18SC
A
APT website – http://www.advancedpower.com
2 – 7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
Test Conditions
V
GS
= 0V, I
D
= 1000μA
V
GS
= 0V,V
DS
= 600V
V
GS
= 0V,V
DS
= 600V
V
GS
= 10V, I
D
= 71.5A
V
GS
= V
DS
, I
D
= 4mA
V
GS
= ±20
V, V
DS
= 0V
Min
600
2.1
Typ
3
Max
100
1000
18
3.9
±200
Unit
V
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
gs
Gate – Source Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
28
10.2
0.85
1036
Max
Unit
nF
116
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 300V
I
D
= 143A
444
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
21
30
283
Fall Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 400V
I
D
= 143A
R
G
= 1.2
84
ns
Eon
Turn-on Switching Energy
1608
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 143A,
R
G
= 1.2
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 143A,
R
G
= 1.2
3920
μJ
Eon
Turn-on Switching Energy
2630
Eoff
Turn-off Switching Energy
4824
μJ
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
I
F(AV)
Maximum Average Forward Current
Test Conditions
50% duty cycle
I
F
= 120A
I
F
= 240A
I
F
= 120A
I
F
= 120A
V
R
= 133V
di/dt = 400A/μs
I
F
= 120A
V
R
= 133V
di/dt = 400A/μs
Min
Typ
120
1.1
1.4
0.9
Max
1.15
Unit
A
T
c
= 85°C
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
31
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
60
ns
120
Q
rr
Reverse Recovery Charge
T
j
= 125°C
500
nC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTC60AM35SCT | Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module |
| APTC60DAM18CTG | Boost chopper SiC FWD diode Super Junction MOSFET Power Module |
| APTC60DDAM35T3 | Dual boost chopper Super Junction MOSFET Power Module |
| APTC60DSKM35T3 | Dual buck chopper Super Junction MOSFET Power Module |
| APTC60DSKM70T3 | Dual buck chopper Super Junction MOSFET Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC60AM18SCG | 功能描述:MOSFET 2N CH 600V 143A SIC SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM242G | 功能描述:MOSFET N CH 600V 95A SP2 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM24SCTG | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60AM24T1G | 功能描述:MOSFET PWR MOD PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM35SCT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。