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參數(shù)資料
| 型號(hào)： | APTC60AM18SC |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 相腳系列 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 320K |
| 代理商： | APTC60AM18SC |
APTC60AM18SC
A
APT website – http://www.advancedpower.com
4 – 7
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
100
200
300
400
500
600
700
800
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
V
GS
=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
90
180
270
360
450
540
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
I
D
,
V
DS
> I
D
(on)xR
DS
(on)MAX
250μs pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
0
40
80
120
160
200
240
I
D
, Drain Current (A)
R
D
(
Normalized to
V
GS
=10V @ 71.5A
0
20
40
60
80
100
120
140
160
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,
DC Drain Current vs Case Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC60AM18SCG | 功能描述:MOSFET 2N CH 600V 143A SIC SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM242G | 功能描述:MOSFET N CH 600V 95A SP2 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM24SCTG | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60AM24T1G | 功能描述:MOSFET PWR MOD PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM35SCT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module |
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