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參數(shù)資料
| 型號(hào)： | APT77N60JC3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Super Junction MOSFET |
| 中文描述： | 超級(jí)結(jié)MOSFET的 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 187K |
| 代理商： | APT77N60JC3 |
APT77N60JC3
Typical Performance Curves
231
OPERATION HERE
LIMITED BY R
DS
(ON)
0
Crss
Ciss
Coss
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 77A
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
600
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
250
V
G
,
I
D
,
I
D
,
C
1
10
100
600
0
10
20
30
40
50
0
100
200
300
400
500
600
700 800
0.3
0.5
0.7
0.9
1.1
1.3
1.5
100
50
10
5
1
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100μS
TJ =+150°C
TJ =+25°C
I
(A)
I
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
16000
I
D
(A)
R
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
FIGURE 16, SWITCHING ENERGY vs CURRENT
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100μH
E
on
E
off
t
r
t
f
S
μ
J
t
d
d
μ
J
t
r
f
(
10
30
50
70
90
110
130
150
10
30
50
70
90
110
130
150
10
30
50
70
90
110
130
150
0
5
10
15
20
25
30
35
40
45
50
V
DD
= 400V
I
D
= 77A
T
J
= 125°C
L = 100μH
E
ON
includes
diode reverse recovery.
VDS= 300V
VDS= 120V
VDS= 480V
t
d(on)
t
d(off)
E
on
E
off
500
400
300
200
100
0
8000
7000
6000
5000
4000
3000
2000
1000
0
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100μH
V
DD
= 400V
R
G
= 5
T
J
= 125°C
L = 100μH
E
ON
includes
diode reverse recovery.
60,000
10,000
1,000
100
10
100
10
1
200
150
100
50
0
14000
12000
10000
8000
6000
4000
2000
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT77N60JC3_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
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