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參數(shù)資料
| 型號(hào)： | APT77N60JC3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Super Junction MOSFET |
| 中文描述： | 超級(jí)結(jié)MOSFET的 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 187K |
| 代理商： | APT77N60JC3 |
4.5V
5V
5.5V
4V
VGS =15 &10V
6V & 6.5V
APT77N60JC3
Typical Performance Curves
0
R
D
(
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VD250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
200
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (°C)
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3
I
D
= 47A
V
GS
= 10V
T
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
5
10
15
20
0
1
2
3
4
5
6
0
20
40
60
80
100 120 140 160 180
25
50
75
100
125
150
-50 -25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
NORMALIZED TO
V
GS
= 10V @ 47A
180
160
140
120
100
80
60
40
20
0
80
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0
200
180
160
140
120
100
80
60
40
20
0
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.1
1.0
0.9
0.8
0.7
0.6
0.00999
0.0212
0.0724
0.00421F
0.00198F
0.0129F
Power
(watts)
Junction
temp. (
°
C)
RC MODEL
Case temperature. (
°
C)
0.116
0.314F
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| APT77N60JC3_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
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