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參數(shù)資料
| 型號(hào)： | APT77N60JC3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Super Junction MOSFET |
| 中文描述： | 超級(jí)結(jié)MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 187K |
| 代理商： | APT77N60JC3 |
DYNAMIC CHARACTERISTICS
APT77N60JC3
0
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25°C, L = 36.0mH, R
G
=
25
, Peak I
L
= 10A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
≤
-
I
D
77A
di
/
dt
≤
700A/μs
V
R
≤
V
DSS
T
J
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as
P
AV
=E
AR
*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -
77A
)
Reverse Recovery Time (I
S
= -
77A
, dl
S
/dt = 100A/μs, V
R
= 350V)
Reverse Recovery Charge (I
S
= -
77A
, dl
S
/dt = 100A/μs, V
R
= 350V)
Peak Diode Recovery
dv
/
dt 5
UNIT
Amps
Volts
ns
μC
V/ns
MIN
TYP
MAX
77
231
1.2
1
861
46
6
Symbol
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.22
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 77A
@ 25°C
RESISTIVE SWITCHING
V
GS
=
10V
V
DD
=
380V
I
D
=
77A
@ 125°C
R
G
=
0.9
INDUCTIVE SWITCHING @ 25°C
V
DD
=
400V, V
GS
= 15V
I
D
=
77A, R
G
=
5
INDUCTIVE SWITCHING @ 125°C
V
DD
=
400V, V
GS
= 15V
I
D
=
77A, R
G
=
5
MIN
TYP
MAX
13600
4400
290
505
48
640
240
18
27
110
165
8
12
1670
2880
2300
3100
UNIT
pF
nC
ns
μ
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
SINGLE PULSE
Z
θ
J
,
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.20
0.15
0.10
0.05
0
0.5
0.1
0.05
0.3
0.7
0.9
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|---|---|
| APT77N60JC3_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
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