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參數(shù)資料
| 型號： | APT60GT60SR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 168K |
| 代理商： | APT60GT60SR |
052-6223
Rev
C
11-2005
APT60GT60BR_SR
VCC= 0.66 VCES
VGE= +15V
TJ = +25°C
IC = IC2
VCC= 0.66 VCES
VGE= +15V
TJ = +125°C
RG =10
VCC= 0.66 VCES
VGE= +15V
RG =10
IC1
0.5 IC2
IC2
IC1
Eon
Eoff
Eon
Eoff
0.5 IC2
IC2
I C
,
COLLECTOR
CURRENT
(AMPERES)
TOTAL
SWITCHING
ENERGY
LOSSES
(mJ)
B
V
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
(SAT),
COLLECTOR-TO-EMITTER
VOLTAGE
(NORMALIZED)
SATURATION
VOLTAGE
(VOLTS)
SWITCHING
ENERGY
LOSSES
(mJ)
SWITCHING
ENERGY
LOSSES
(mJ)
I C
,COLLECTOR
CURRENT
(AMPERES)
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature
Figure 9, Maximum Collector Current vs Case Temperature
TJ, JUNCTION TEMPERATURE (°C)
RG, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature
Figure 11, Typical Switching Energy Losses vs Gate Resistance
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
-50 -25
0
25
50
75
100 125 150
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75
100 125 150
0
10
20
30
40
50
60
0.1
1.0
10
100
1000
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
20
10
1
120
10
1
120
90
60
30
0
8.0
6.0
4.0
2.0
0
2.5
2.0
1.5
1.0
0.5
0
For Both:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gate drive as specified
Powerdissapation=140W
ILOAD=IRMSoffundamental
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