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參數(shù)資料
| 型號： | APT60GT60SR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 168K |
| 代理商： | APT60GT60SR |
052-6223
Rev
C
11-2005
APT60GT60BR_SR
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
Figure 2, Typical Output Characteristics (TJ = 150°C)
VCE,COLLECTOR-TO-EMITTERVOLTAGE(VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V
Figure 4, Maximum Forward Safe Operating Area
VCE,COLLECTOR-TO-EMITTERVOLTAGE(VOLTS)
Qg,TOTALGATECHARGE(nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
C,
CAPACITANCE
(pF)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(VOLTS)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
TC =+25°C
TJ =+150°C
SINGLE PULSE
IC = IC2
TJ = +25°C
f = 1MHz
VCE=480V
VCE=300V
7V
Cies
Cres
9V
6V
9V
8V
6V
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.05
D=0.5
0.2
0.02
0.01
SINGLE PULSE
Coes
0
4
8
12
16
20
0
4
8
12
16
20
0
1
2
3
4
5
1
5
10
50 100
600
0.01
0.1
1.0
10
50
0
100
200
300
400
10-5
10-4
10-3
10-2
10-1
1.0
10
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
VGE=17, 15, 13, 11 & 10V
VCE=120V
TC=-55°C
TC=+25°C
0.1
OPERATION
LIMITED
BY
VCE (SAT)
100s
1ms
10ms
160
120
80
40
0
232
100
10
5
1
20
16
12
8
4
0
160
120
80
40
0
160
120
80
40
0
10,000
1,000
100
VGE=17, 15, 13, 11 & 10V
8V
250sec.PulseTest
VGE=15V
5V
TC=+150°C
0.5
0.1
0.05
0.01
0.005
0.001
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