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參數(shù)資料
| 型號(hào)： | APT60GT60SR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 168K |
| 代理商： | APT60GT60SR |
052-6223
Rev
C
11-2005
APT60GT60BR_SR
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.5VCES
IC = IC2
RG = 10
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +25°C
VCE = 20V, IC = IC2
MIN
TYP
MAX
3125
3590
310
450
180
310
275
410
19
30
120
180
20
40
95
190
315
470
245
490
25
50
59
120
430
650
65
130
1.6
3.2
2.4
4.8
4.0
8.0
26
50
63
125
395
590
68
140
3.4
7.0
4
UNIT
pF
nC
ns
mJ
ns
mJ
S
UNIT
°C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.25
40
0.22
6.1
10
1.1
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
Symbol
RΘJC
RΘJA
WT
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 I
C = IC2, RGE = 25, L = 36H, Tj = 25°C
3 SeeMIL-STD-750Method3471
4 The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
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