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參數(shù)資料
| 型號： | APT6040BVR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 132K |
| 代理商： | APT6040BVR |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
I D
,DRAIN
CURRENT
(AMPERES)
I
DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAP
ACIT
ANCE
(pF)
APT6040B_SVR
1
5
10
50 100
600
.01
.1
1
10
50
0
50
100
150
200
250
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
C =+25°C
T
J =+150°C
SINGLE PULSE
100
50
10
5
1
0.5
0.1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY R
DS
(ON)
T
J =+150°C
T
J =+25°C
C
rss
C
oss
C
iss
10,000
5,000
1,000
500
100
50
10
5
1
.5
.1
V
DS=120V
V
DS=480V
I
D = 7.5A
10μS
1mS
10mS
100mS
DC
100μS
V
DS=300V
050-7263
Rev
A
1
1-2009
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
e3 100% Sn Plated
D3PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
Drain
Source
Drain
Heat Sink (Collector)
Drain
Source
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6040SVRG | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6041CLL | 14 A, 600 V, 0.41 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| APT6045BVR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6045SVR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6045SVRG | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6040BVRG | 功能描述:MOSFET N-CH 600V 16A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT6040DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | CHIP |
| APT6040HN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16.5A I(D) | TO-258ISO |
| APT6040SVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT6040SVFRG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
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