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參數(shù)資料
| 型號： | APT6040BVR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 132K |
| 代理商： | APT6040BVR |
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 15A @ 25°C
V
GS = 15V
V
DD = 300V
I
D = 15A @ 25°C
R
G = 1.6Ω
MIN
TYP
MAX
2600
3120
305
425
125
180
115
170
15
25
52
75
10
20
9
18
38
50
6
12
UNIT
pF
nC
ns
APT6040B_SVR
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
050-7263
Rev
A
1
1-2009
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -15A)
Reverse Recovery Time (I
S = -15A, dlS/dt = 100A/μs)
Reverse Recovery Charge (I
S = -15A, dlS/dt = 100A/μs)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μC
MIN
TYP
MAX
15
60
1.3
400
6
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting T
j = +25°C, L = 8.50mH, RG = 25Ω, Peak IL = 15A
2 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
Microsemi Reserves the right to change, without notice, the specications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.50
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6040SVRG | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6041CLL | 14 A, 600 V, 0.41 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| APT6045BVR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6045SVR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6045SVRG | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6040BVRG | 功能描述:MOSFET N-CH 600V 16A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT6040DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | CHIP |
| APT6040HN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16.5A I(D) | TO-258ISO |
| APT6040SVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT6040SVFRG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
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