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參數(shù)資料
| 型號(hào)： | APT6040BVR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 132K |
| 代理商： | APT6040BVR |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-T
O-SOURCE
ON
RESIST
ANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOL
TAGE
BV
DSS
,DRAIN-T
O-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-T
O-SOURCE
ON
RESIST
ANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOL
TAGE
(NORMALIZED)
APT6040B_SVR
0
50
100
150
200
250
300
0
5
10
15
20
25
0
2
4
6
8
0
6
12
18
24
30
36
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
-50
-25
0
25
50
75 100 125 150
I
D = 7.5A
V
GS = 10V
30
24
18
12
6
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30
24
18
12
6
0
30
24
18
12
6
0
16
12
8
4
0
2.5
2.0
1.5
1.0
0.5
0.0
V
DS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4.5V
5V
V
GS=6V, 7V, 10V & 15V
V
GS=10V
V
GS=20V
T
J = +125°C
T
J = +25°C
T
J = -55°C
4V
4.5V
5V
5.5V
4V
6V
V
GS=7V, 10V
V
GS=15V
5.5V
NORMALIZED TO
V
GS = 10V @ 7.5A
050-7263
Rev
A
1
1-2009
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6040SVRG | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6041CLL | 14 A, 600 V, 0.41 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| APT6045BVR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6045SVR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6045SVRG | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6040BVRG | 功能描述:MOSFET N-CH 600V 16A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT6040DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | CHIP |
| APT6040HN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16.5A I(D) | TO-258ISO |
| APT6040SVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT6040SVFRG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
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