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參數(shù)資料
| 型號(hào)： | APT50N60JCU2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 150K |
| 代理商： | APT50N60JCU2 |
APT50N60JCU2
APT
50N60JCU2
–
Rev
2
Apr
il,
2008
www.microsemi.com
3- 6
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Max. Peak Repetitive Reverse Voltage
600
V
IF = 30A
1.8
2.2
IF = 60A
2
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.3
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR = 600V
Tj = 125°C
500
A
CT
Junction Capacitance
VR = 200V
36
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/s
Tj = 25°C
22
Tj = 25°C
25
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
3
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
6
A
Tj = 25°C
35
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/s
Tj = 125°C
480
nC
trr
Reverse Recovery Time
85
ns
Qrr
Reverse Recovery Charge
920
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/s
Tj = 125°C
20
A
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
CoolMos
0.43
RthJC
Junction to Case Thermal Resistance
Diode
1.1
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG
Storage Temperature Range
-40
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Source
Gate
Drain
Cathode
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT51F50J | 功能描述:MOSFET N-CH 500V 51A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT51M50J | 功能描述:MOSFET N-CH 500V 51A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT51M50J_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel MOSFET |
| APT53F80J | 功能描述:MOSFET N-CH 800V 57A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT53N60BC6 | 功能描述:MOSFET N-CH 600V 53A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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