參數(shù)資料
型號: APT10026JFLL
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 30 A, 1000 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁數(shù): 4/5頁
文件大?。?/td> 168K
代理商: APT10026JFLL
APT10026JFLL
050-7114
Rev
C
3-2009
Eon
Eoff
VDD = 667V
RG = 3
TJ = 125° C
L = 100 H
E
ON includes
diode reverse recovery.
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
Crss
Ciss
Coss
TJ=+150°C
TJ=+25°C
1
10
100
1000
0
10
20
30
40
50
0
50 100 150 200 250 300 350 400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
10mS
1mS
100S
TC = +25°C
TJ = +150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
ID = 38A
120
50
10
1
16
12
8
4
0
30,000
10,000
1,000
100
200
100
10
1
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15,RISE AND FALL TIMES vs CURRENT
ID (A)
RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
VDD = 667V
RG = 3
TJ = 125°C
L = 100 H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f(ns)
5 10 15 20 25 30 35 40 45 50 55 60
5 101520 2530 354045 50 55 60
0 5 10 15 20 25 30 35 40 45 50
VDD = 667V
ID = 38A
TJ = 125 °C
L = 100 H
E
ON includes
diode reverse recovery.
td(on)
td(off)
160
140
120
100
80
60
40
20
0
4000
3500
3000
2500
2000
1500
1000
500
0
VDD = 667V
RG = 3
TJ = 125°C
L = 100 H
100
80
60
40
20
0
10000
8000
6000
4000
2000
0
VDS = 500V
VDS = 200V
VDS = 800V
相關(guān)PDF資料
PDF描述
APT10026JN 33 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET
APT1002RBN 7 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT1002R4BN 6.5 A, 1000 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT10030L2VFR 33 A, 1000 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10043JVR 22 A, 1000 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT10026JFLL_03 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10026JLL 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
APT10026JLL_03 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10026JN 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT10026JNR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 33A I(D)