參數(shù)資料
型號: APT10026JFLL
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 30 A, 1000 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁數(shù): 3/5頁
文件大?。?/td> 168K
代理商: APT10026JFLL
050-7114
Rev
C
3-2009
Typical Performance Curves
APT10026JFLL
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
7.5V
5V
5.5V
6.5V
6V
7V
15 &10V
VDS> ID (ON) x R DS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS(TH)
,THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCEMODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE
TEMPERATURE
FIGURE 7,BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
ID = 15A
VGS = 10V
90
80
70
60
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
120
100
80
60
40
20
0
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
0.0492
0.142
0.0189
0.0273F
0.469F
44.2F
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
NORMALIZED TO
VGS = 10V @ I D = 15A
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