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參數(shù)資料
| 型號： | APT10026JFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 1000 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 168K |
| 代理商： | APT10026JFLL |
DYNAMIC CHARACTERISTICS
APT10026JFLL
050-7114
Rev
C
3-2009
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -38A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -38A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -38A, di/dt = 100A/s)
Peak Recovery Current
(IS = -38A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
30
120
1.3
18
Tj = 25°C
310
Tj = 125°C
625
Tj = 25°C
2.0
Tj = 125°C
6.0
Tj = 25°C
15
Tj = 125°C
26
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.21
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 7.11mH, RG = 25, Peak IL = 30A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -30A
di/dt ≤ 700A/s VR≤ 1000 TJ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 500V
ID = 38A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 500V
ID = 38A @ 25°C
RG = 0.6
INDUCTIVE SWITCHING @ 25°C
VDD = 667V, VGS = 15V
ID = 38A, RG = 3
INDUCTIVE SWITCHING @ 125°C
VDD = 667V VGS = 15V
ID = 38A, RG = 3
MIN
TYP
MAX
7114
1268
224
267
34
173
17
8
39
9
1196
713
2014
971
UNIT
pF
nC
ns
J
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