ProASICPLUS Flash Family FPGAs 2- 68 v5.9 Asynchronous FIFO Write Note: The p" />
參數(shù)資料
型號: APA150-BGG456
廠商: Microsemi SoC
文件頁數(shù): 155/178頁
文件大?。?/td> 0K
描述: IC FPGA PROASIC+ 150K 456-PBGA
標準包裝: 24
系列: ProASICPLUS
RAM 位總計: 36864
輸入/輸出數(shù): 242
門數(shù): 150000
電源電壓: 2.3 V ~ 2.7 V
安裝類型: 表面貼裝
工作溫度: 0°C ~ 70°C
封裝/外殼: 456-BBGA
供應商設備封裝: 456-PBGA(35x35)
ProASICPLUS Flash Family FPGAs
2- 68
v5.9
Asynchronous FIFO Write
Note: The plot shows the normal operation status.
Figure 2-41 Asynchronous FIFO Write
Table 2-64 TJ = 0°C to 110°C; VDD = 2.3 V to 2.7 V for Commercial/Industrial
TJ = –55°C to 150°C, VDD = 2.3 V to 2.7 V for Military/MIL-STD-883
Symbol txxx
Description
Min.
Max.
Units
Notes
DWRH
DI hold from WB
1.5
ns
DWRS
DI setup to WB
0.5
ns
PARGEN is inactive
DWRS
DI setup to WB
2.5
ns
PARGEN is active
EWRH, FWRH,
THWRH
Old EMPTY, FULL, EQTH, & GETH valid hold
time after WB
0.5
ns
Empty/full/thresh are invalid from the end
of hold until the new access is complete
EWRA
EMPTY
↓ access from WB ↑
3.01
ns
FWRA
New FULL access from WB
3.01
ns
THWRA
EQTH or GETH access from WB
4.5
ns
WPDA
WPE access from DI
3.0
ns
WPE is invalid while PARGEN is active
WPDH
WPE hold from DI
1.0
ns
WRCYC
Cycle time
7.5
ns
WRRDS
RB
↑, clearing FULL, setup to
WB
3.02
ns
Enabling the write operation
1.0
Inhibiting the write operation
WRH
WB high phase
3.0
ns
Inactive
WRL
WB low phase
3.0
ns
Active
Notes:
1. At fast cycles, EWRA, FWRA = MAX (7.5 ns – WRL), 3.0 ns.
2. At fast cycles, WRRDS (for enabling write) = MAX (7.5 ns – RDL), 3.0 ns.
3. After FIFO reset, WRB needs an initial falling edge prior to any write actions.
WPE
WDATA
(Full inhibits write)
WB = (WRB + WBLKB)
EMPTY
EQTH, GETH
FULL
Cycle Start
RB
tWRRDS
tDWRH
tWPDH
tWPDA
tDWRS
tEWRH, tFWRH
tEWRA, tFWRA
tTHWRH
tTHWRA
tWRH
tWRL
tWRCYC
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