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參數(shù)資料
| 型號(hào)： | AP9972GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 35 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 81K |
| 代理商： | AP9972GI |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
60
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.06
-
V/
℃
R
DS(ON)
V
GS
=10V, I
D
=23A
-
-
18
m
Ω
V
GS
=4.5V, I
D
=12A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=23A
V
DS
=60V, V
GS
=0V
V
DS
=48V ,V
GS
=0V
V
GS
=±25V
I
D
=23A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=35A
R
G
=3.3
Ω
,
V
GS
=10V
R
D
=0.86
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
-
-
22
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
1
-
-
3
-
V
S
uA
40
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
-
-
-
-
-
-
-
-
-
-
10
25
±100
56
-
-
-
-
-
Drain-Source Leakage Current (T
j
=150
o
C)
uA
nA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
35
9.5
20
12
37
47
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
-
-
-
-
59
3160
280
230
1.6
-
ns
5060
-
-
2.4
pF
pF
pF
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
Typ.
-
Max.
1.2
Units
V
Forward On Voltage
2
I
S
=23A, V
GS
=0V
I
S
=23A,
V
GS
=0
V
,
dI/dt=100A/μs
Reverse Recovery Time
-
36
-
ns
Reverse Recovery Charge
-
45
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Starting T
j
=25
o
C , V
DD
=30V , L=1mH , R
G
=25
Ω
, I
AS
=30A.
AP9972GI
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