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參數(shù)資料
| 型號： | AP9980J |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強(qiáng)模式 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 83K |
| 代理商： | AP9980J |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low Gate Charge
BV
DSS
R
DS(ON)
I
D
80V
45m
Ω
21.3A
▼
Single Drive Requirement
▼
Fast Switching Performance
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
P
D
@T
C
=25
℃
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
3.0
110
Units
℃
/W
℃
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
41.7
0.33
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
13.4
80
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
±25
21.3
Parameter
Rating
80
Drain-Source Voltage
200406041
AP9980H/J
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9980J) are available for low-profile applications.
GD
S
TO-251(J)
GDS
TO-252(H)
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相關(guān)代理商/技術(shù)參數(shù) |
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| AP9980M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
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| AP9987GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9987GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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